[1]
Phuangyod, A., Wongsrinak, W. and Srirattanawichaikul, W. 2026. Temperature-Dependent Hall Effect Analysis and Physics-Based Modeling of Indium Arsenide. ECTI Transactions on Electrical Engineering, Electronics, and Communications. 24, 2 (Jun. 2026). DOI:https://doi.org/10.37936/ecti-eec.2026242.262000.