PHUANGYOD, A.; WONGSRINAK, W.; SRIRATTANAWICHAIKUL, W. Temperature-Dependent Hall Effect Analysis and Physics-Based Modeling of Indium Arsenide. ECTI Transactions on Electrical Engineering, Electronics, and Communications, [S. l.], v. 24, n. 2, 2026. DOI: 10.37936/ecti-eec.2026242.262000. Disponível em: https://ph02.tci-thaijo.org/index.php/ECTI-EEC/article/view/262000. Acesso em: 15 sep. 2026.