Low-Temperature Micro-PL Measurements of InAs Binary Quantum Dots on GaAs Substrate

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Published: Dec 1, 2007
DOI: https://doi.org/10.37936/ecti-eec.200862.171778
Keywords:
binary quantum dot excitation power-dependent photoluminescence temperature dependent polarization polarization anisotropy carrier dynamics

Main Article Content

Nan Thidar Chit Swe
Research Center for Advance Science and Technology, University of Tokyo
Suwaree Suraprapapich
Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University
Chanin Wissawinthanon
Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University
Somsak Panyakeow
Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University
Charles W. Tu
Department of Electrical and Computer Engineering, University of California
Yasuhiko Arakawa
Research Center for Advance Science and Technology, University of Tokyo,

Abstract

Optical properties of InAs binary quantum dot (bi-QD) molecules grown on the (001) GaAs substrate were measured by means of temperature- and excitation-power-dependent photoluminescence (PL) spectroscopy. It was observed that the shape and peak position of the PL spectra changed with the temperature and with the excitation power. It was also found that the linear polarization degree of the bi-QD PL signal changed with temperature. The temperature-dependent PL described that the linear polarization degree of bi-QDs is closely related to the carrier dynamics.

Article Details

How to Cite
Chit Swe, N. T., Suraprapapich, S., Wissawinthanon, C., Panyakeow, S., Tu, C. W., & Arakawa, Y. (2007). Low-Temperature Micro-PL Measurements of InAs Binary Quantum Dots on GaAs Substrate. ECTI Transactions on Electrical Engineering, Electronics, and Communications, 6(2), 140–146. https://doi.org/10.37936/ecti-eec.200862.171778
Issue
Vol. 6 No. 2 (2008): Regular Issue
Section
Research Article

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