Geometrical Variation of a Conductive Filament in RRAM and Its Impact on a Single-Event Upset
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Abstract
Resistive random access memory (RRAM) is a promising candidate for industry and academia from the research and development perspective. The resistance of RRAM depends on the geometrical dimensions, growth, and rupture of the conductive filament. In this work, the geometrical dimensions such as the length and width of the filament are varied to analyze the resistance. Moreover, the RRAM can be used in aerospace applications. Therefore, the impact of a single-event upset on resistance of RRAM is investigated by means of a double exponential current pulse. The performance of the device is compared in terms of resistance before and after irradiation. A decrease in its original resistance has been observed after radiation.
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