The Performance of Organic Field Effect Transistor Affected by Different Thickness of Active Semiconductor Layer and Thickness of Gate Insulator
Main Article Content
Abstract
The purpose of this paper is to fabricate organic field effect transistor and to investigate the effect of the thickness of the pentacene active layer and the thickness of gate insulator layer on MOSFET performance. The fabricated structure is top-contact. When the thickness of the insulator gate layer increases from 10 nm to 30 nm, the magnitude of the drain source current, when VGS = VDS = -4 V, decreases from 1813 nA to 214 nA and then the threshold voltage shifts from -1.4 V to -2.4 V. When the thickness of the pentacene increases from 9 nm to 40 nm, the threshold voltage voltage shifts slightly in the negative direction from -1.4 V to -1.6 V for SiO2 thickness of 10 nm. In case of SiO2 thickness of 20 nm, the threshold voltage voltage shifts from -1.9 V to -2.2 V. In case of SiO2 thickness of 30 nm, the threshold voltage voltage shifts from -2.4 V to -2.9 V. Besides that, the mobility decreases from around 0.31 cm2/(Vs) to 0.15 cm2/(Vs) when the pentacene thickness increases from 9 nm to 40 nm.
Article Details
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
This journal provides immediate open access to its content on the principle that making research freely available to the public supports a greater global exchange of knowledge.
- Creative Commons Copyright License
The journal allows readers to download and share all published articles as long as they properly cite such articles; however, they cannot change them or use them commercially. This is classified as CC BY-NC-ND for the creative commons license.
- Retention of Copyright and Publishing Rights
The journal allows the authors of the published articles to hold copyrights and publishing rights without restrictions.
References
R. Mac Ciarnain et al., “Emission from outside of the emission layer in state-of-the-art phosphorescent organic light-emitting diodes,” Org. Electron., vol. 44, pp. 115–119, 2017.
Q.-X. Li et al., “Flexible organic field-effect tran- sistor arrays for wearable neuromorphic device applications,” Nanoscale, vol. 12, no. 45, pp. 23150– 23158, 2020.
I. Orak, A. Kocyigit, İ. Karteri, and S. Uruş, “Frequency-dependent electrical characterization of GO-SiO 2 composites in a Schottky device,” J. Electron. Mater., vol. 47, pp. 6691–6700, 2018.
D. H. Vieira, M. da Silva Ozório, G. L. Nogueira, and N. Alves, “Impedance spectroscopy analysis of poly (3-hexylthiophene): TIPS-pentacene blends in different ratios,” Phys. B Condens. Matter, vol. 623, p. 413346, 2021.
Y. Vaynzof, “The future of perovskite photovoltaics—thermal evaporation or solution processing?,” Adv. Energy Mater., vol. 10, no. 48, p. 2003073, 2020.
R. K. Jain, J. Kaur, A. Khanna, and A. K. Chawla, “Tailoring the structural, electrical, optical and wettability properties of ZnSe films by oblique angle thermal evaporation,” Mater. Res. Express, vol. 6, no. 11, p. 116451, 2019.
T. Mahanta, P. K. Kasana, and T. Mohanty, “Surface potential mapping of chemically synthesized boron nitride nanosheets,” in AIP Conference Proceedings, AIP Publishing LLC, 2020, p. 030080.
C.-Y. Huang and Y.-H. Hsieh, “Tunneling-assisted carrier transfer in pentacene-based thin-film tran- sistors with a MoO 3 buffer layer,” in 2018 7th Inter- national Symposium on Next Generation Electronics (ISNE), IEEE, 2018, pp. 1–3.
C. Shakher Tyagi, R. L. Sharma, and P. Mani, “A Study on Electrical Characterization of SurfacePotential and Threshold Voltage for Nano Scale FDSOI MOSFET,” Int. J. Eng. Technol., vol. 7, no. 3.12, p. 232, Jul. 2018, doi: 10.14419/ijet.v7i3.12.16031.
Z.-W. Shang, H.-H. Hsu, Z.-W. Zheng, and C.-H. Cheng, “Progress and challenges in p-type oxide- based thin film transistors,” Nanotechnol. Rev., vol. 8, no. 1, pp. 422–443, 2019.
B. B. Patowary, S. Laskar, P. P. Sahu, and R. Narzary, “Fabrication and electrical characteriza- tion of organic field-effect transistor based on CSA doped PANi-Ta 2 O 5 nanocomposite,” ADBU J. Eng. Technol., vol. 9, no. 1, pp. 1–8, 2020.
C. A. Pons-Flores, I. Mejía, M. A. Quevedo-López, C. Alvarado-Beltran, and L. M. Reséndiz, “Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors,” Superf. Vacío, vol. 30, no. 3, pp. 46–50, 2017.
S. Chandrasekharan, S. A. Assis, S. L. Pankaj, and S. Hameed, “Effect Of Dielectrics On Mobility Of Pentacene Ofet,” Int. J. Eng. Res. Appl., vol. 8, no. 3, pp. 4–8, 2018.
A. Skaiky, A. El Hajj, M. Koabaz, and A. Ghaddar, “Characterization of Organic Inverter,” Int. J. Elec- tron. Commun. Eng., vol. 7, no. 6, pp. 13–16, 2020.
P. RAJPUT and V. K. SINGH, “MEASUREMENT OF CHANNEL MOBILITY IN TOP CONTACT PEN- TACENE ORGANIC THIN FILM TRANSISTORS,” Int. J. Mech. Prod. Eng. Res. Dev., vol. 10, no. 3, pp. 8565–8570, 2020.
N.Pornsuwancharoen,P.Youplao,I.S.Amiri,J.Ali, and P. Yupapin, “Electron driven mobility model by light on the stacked metal-dielectric interfaces: PORNSUWANCHAROEN et al .,” Microw. Opt. Tech- nol. Lett., vol. 59, no. 7, pp. 1704–1709, Jul. 2017, doi: 10.1002/mop.30612.
R. Alchaar et al., “Enhanced UV photosensing properties of ZnO nanowires prepared by electrode- position and atomic layer deposition,” J. Solid State Electrochem., vol. 21, no. 10, pp. 2877–2886, Oct. 2017, doi: 10.1007/s10008-017-3612-5.
H. Sasaki, T. Hara, and I. Sakata, “Prediction of emerging papers in nanocarbon materials-related research using a citation network,” 2016 Portland Int. Conf. Manag. Eng. Technol. PICMET, pp. 2636–2644, Jan. 2017.
A. R. Ullah, H. J. Joyce, H. H. Tan, C. Jagadish, and A. P. Micolich, “The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors,” Nanotechnology, vol. 28, no. 45, p. 454001, Nov. 2017, doi: 10.1088/1361- 6528/aa8e23.