Temperature-Dependent Hall Effect Analysis and Physics-Based Modeling of Indium Arsenide
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Abstract
This paper presents a physics-based numerical framework for modeling Hall-effect transport in n-type indium arsenide (InAs) using the Van der Pauw configuration under sinusoidal electrical excitation. The framework is implemented in a numerical computing environment and captures the coupled relationships among drive current, magnetic flux density, specimen thickness, and the Hall coefficient over a wide range of electrical and thermal operating conditions. The model incorporates temperature-dependent bandgap narrowing via the Varshni relation, effective carrier masses, donor concentration, and mobility behavior following Matthiessen’s rule, together with geometric attributes and operating variables such as magnetic-field strength, temperature ranging from 200 K to 500 K, and time-varying excitation. The computational engine predicts temperature- and frequency-dependent transport quantities, including Hall voltage, carrier concentration, mobility, resistivity, conductivity, and the transit-time-limited cutoff frequency. The resulting framework provides a unified and reproducible computational tool that links microscopic transport physics to macroscopic device-level behavior and supports the analysis and design of InAs-based Hall devices without relying on empirical calibration.
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