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This paper presents the developmental progress of CMOS integrated circuit fabrication from the early 1970’s till present time. In the first part of the paper, evolution of the structure and materials to produce MOSFET devices over the years will be summarized. And in the second part, the new kind of device namely FinFET, which is expected to make possible the continuation of the scaling down of CMOS IC in the future, will be discussed.
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Faculty of Engineering and Technology
Mahanakorn University of Technology
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