Design and Fabrication of V-Channel CMOIS Transistors

Abstract

In this paper, the vertical channel CMOIS (Complementary Metal Oxide Intrinsic Semiconductor)transistors are designed and fabricated to substitute the planar channel CMOIS transistors.The goal of the research is to improve the higher current conductance of the transistors. The V-shape channel has been selected because it is the most suitable structure to fabricate. The results show that the process transconductance parameter of the P-channel and N-channel with the V-shape channel are 71.23 % and 73.98 % higher than the planar channel PMOIS and NMOIS respectively.