Addition of an ECTI 2011 Conference Paper: “Design and Implementation of a 1 GHz Ga HEMT Class-F Power Amplifier for Transistor Model Evaluation”

Authors

  • Charinrat Wongtanarak The Sirindhorn International Thai-German Graduate School of Engineering (TGGS), King Mongkut's University of Technology North Bangkok
  • suramate chalermwisutkul The Sirindhorn International Thai-German Graduate School of Engineering, King Mongkut's University of Technology North Bangkok

DOI:

https://doi.org/10.37936/ecti-eec.2012101.170487

Abstract

Design and Implementation of a 1 GHz Ga HEMT Class-F Power Amplifier for Transistor Model Evaluation

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Published

2019-02-05

How to Cite

Wongtanarak, C., & chalermwisutkul, suramate. (2019). Addition of an ECTI 2011 Conference Paper: “Design and Implementation of a 1 GHz Ga HEMT Class-F Power Amplifier for Transistor Model Evaluation”. ECTI Transactions on Electrical Engineering, Electronics, and Communications, 10(1), 138. https://doi.org/10.37936/ecti-eec.2012101.170487

Issue

Vol. 10 No. 1 (2012): Special Session from ECTI-CON 2011

Section

Electrical Power Systems

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