GaN-based Robot Power Supply Design
doi: 10.14456/mijet.2022.36
Keywords:
GaN semiconductor devices, power supply design, robotics, totem-pole bridgeless PFC, LLC converterAbstract
The purpose of this paper is to report how a combination of a totem-pole bridgeless PFC converter and an LLC converter can achieve a high-efficiency power supply operating at 500 kHz, and to compare the stress and losses in the circuit between the proposed GaN-based and conventional Si-based devices. From the experimental point of view, under the proposed topology, the operating loss of the Si-based devices (21.98W) was higher than that of the GaN-based device (4.13W), and the power supply could reach 97.5% efficiency.
References
C. C. R. Yeh, C. C. J. Wong, W. W. V. Chang, and C. C. S. Lai, "Labor Displacement in Artificial Intelligence Era: A Systematic Literature Review," (in English), Taiwan J. East Asian Stud., Review vol. 17, no. 2, pp. 25-75, Dec 2020, doi: 10.6163/tjeas.202012_17(2).0002.
K. Jeebkaew, C. Photong, and N. Pannucharoenwong, "Power Quality Improvement for a Single Phase Solar Inverter using a Current Source Inverter with a Buck Converter," Solid State Technology, vol. 63, no. 6, pp. 7137-7152, 2020.
T. Deguchi, T. Kikuchi, M. Arai, K. Yamasaki, and T. Egawa, "High On/Off current ratio p-InGaN/AlGaN/GaN HEMTs," IEEE Electron Device Lett., Article vol. 33, no. 9, pp. 1249-1251, 2012, Art no. 6248156, doi: 10.1109/LED.2012.2204854.
G. Greco, F. Iucolano, and F. Roccaforte, "Review of technology for normally-off HEMTs with p-GaN gate," Materials Science in Semiconductor Processing, Review vol. 78, pp. 96-106, 2018, doi: 10.1016/j.mssp.2017.09.027.
N. Kim, J. Yu, W. Zhang, R. Li, M. Wang, and W. T. Ng, "Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review," Journal of Electronic Materials, Article vol. 49, no. 11, pp. 6829-6843, 2020, doi: 10.1007/s11664-020-08284-7.
M. Kuzuhara and H. Tokuda, "Low-loss and high-voltage III-nitride transistors for power switching applications," IEEE Transactions on Electron Devices, Article vol. 62, no. 2, pp. 405-413, 2015, Art no. 6967816, doi: 10.1109/TED.2014.2359055.
M. Meneghini, G. Meneghesso, and E. Zanoni, "Power GaN Devices," Cham: Springer International Publishing, 2017.
U. K. Mishra, P. Parikh, and Y. F. Wu, "AlGaN/GaN HEMTs - An overview of device operation and applications," Proceedings of the IEEE, Article vol. 90, no. 6, pp. 1022-1031, 2002, doi: 10.1109/JPROC.2002.1021567.
R. Quay, Gallium nitride electronics. Springer Science & Business Media, 2008.
F. Ren and J. C. Zolper, Wide energy bandgap electronic devices. World Scientific, 2003.
Y. Liu, Z. Ouyang, and M. A. E. Andersen, "Review of soft-switching high-frequency GaN-based single-phase Bridgeless Rectifier," in 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 25-27 Aug. 2021 2021, pp. 411-416, doi: 10.1109/WiPDAAsia51810.2021.9656073.
Z. Chen, P. Davari, and H. Wang, "Single-Phase Bridgeless PFC Topology Derivation and Performance Benchmarking," IEEE Trans. Power Electron., vol. 35, no. 9, pp. 9238-9250, 2020, doi: 10.1109/TPEL.2020.2970005.
L. Huber, Y. Jang, and M. M. Jovanović, "Performance evaluation of bridgeless PFC boost rectifiers," IEEE Trans. Power Electron., Article vol. 23, no. 3, pp. 1381-1390, 2008, doi: 10.1109/TPEL.2008.921107.
F. Musavi, W. Eberle, and W. G. Dunford, "A high-performance single-phase bridgeless interleaved PFC converter for plug-in hybrid electric vehicle battery chargers," IEEE Transactions on Industry Applications, Article vol. 47, no. 4, pp. 1833-1843, 2011, Art no. 5771100, doi: 10.1109/TIA.2011.2156753.
L. Bing, L. Wenduo, L. Yan, F. C. Lee, and J. D. v. Wyk, "Optimal design methodology for LLC resonant converter," in Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06., 19-23 March 2006 2006, p. 6 pp., doi: 10.1109/APEC.2006.1620590.
D. Huang, S. Ji, and F. C. Lee, "Matrix transformer for LLC resonant converters," in 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 17-21 March 2013 2013, pp. 2078-2083, doi: 10.1109/APEC.2013.6520582.
W. Zhang, Y. Cui, F. Wang, L. M. Tolbert, B. J. Blalock, and D. J. Costinett, "Investigation of Gallium Nitride devices benefits on LLC resonant DC-DC converter," in 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 15-19 March 2015 2015, pp. 146-153, doi: 10.1109/APEC.2015.7104345.
W. Zhang, F. Wang, D. J. Costinett, L. M. Tolbert, and B. J. Blalock, "Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters," IEEE Trans. Power Electron., vol. 32, no. 1, pp. 571-583, 2017, doi: 10.1109/TPEL.2016.2528291.
M. D. Seeman, S. R. Bahl, D. I. Anderson, and G. A. Shah, "Advantages of GaN in a high-voltage resonant LLC converter," in 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014, 16-20 March 2014 2014, pp. 476-483, doi: 10.1109/APEC.2014.6803351.
L. A. D. Ta, N. D. Dao, and D. Lee, "High-Efficiency Hybrid LLC Resonant Converter for On-Board Chargers of Plug-In Electric Vehicles," IEEE Trans. Power Electron., vol. 35, no. 8, pp. 8324-8334, 2020, doi: 10.1109/TPEL.2020.2968084.
R. Beiranvand, B. Rashidian, M. R. Zolghadri, and S. M. H. Alavi, "Using LLC Resonant Converter for Designing Wide-Range Voltage Source," IEEE Trans. Ind. Electron., vol. 58, no. 5, pp. 1746-1756, 2011, doi: 10.1109/TIE.2010.2052537.
L. Xue., Z. Shen., D. Boroyevich., and P. Mattavelli., "GaN-based high frequency totem-pole bridgeless PFC design with digital implementation," in 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 15-19 March 2015 2015, pp. 759-766, doi: 10.1109/APEC.2015.7104435.
Z. Liu, F. C. Lee, Q. Li, and Y. Yang, "Design of GaN-Based MHz Totem-Pole PFC Rectifier," IEEE J. Emerg. Sel. Top. Power Electron., vol. 4, no. 3, pp. 799-807, 2016, doi: 10.1109/JESTPE.2016.2571299.
"LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection datasheet (Rev. F)," may 2020 ed, 2020.
"Datasheet IPB60R070CFD7," 5-2019 ed, 2019.
Downloads
Published
How to Cite
Issue
Section
License
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.