Structural and Electrical Properties of ZnO Prepared by RF Sputtering Technique
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Abstract
Zinc oxide (ZnO) thin film can be prepared by many techniques, one of the most popular techniques is the RF sputtering technique in which the researcher is interested in studying the structural and electrical properties of zinc oxide thin film with different coating times (15, 30, 45 and 60 min) on the glass substrate using RF sputtering technique in argon gas atmosphere. Structure study using X-ray diffraction (XRD) technique. It was found that every zinc oxide thin film with different coating times had hexagonal wurtzite crystal structure in the plane (002) at the angle of 2Θ, equal to 34.4๐ and the intensity of X-rays at the plane (002) increases as the time for coating increases. From the photos taken by the scanning electron microscopy (SEM) showed that the zinc oxide thin film. At increasing coating time, grain size increased with the coating time and this sample at 60 minutes coating time was the largest grain size and evenly distributed grain. And has the lowest electrical resistivity (2.68 Ω.m) which is measured by the four - points Van der Pauw technique. The results confirm that the crystal structure, grain size and electrical conductivity of the zinc oxide thin film synthesized by RF sputtering technique can improve the properties of the zinc oxide thin film by coating time.
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