Structural and Electrical Characteristics of CaCu3-xFexTi4O12 Ceramics
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Abstract
Fe3+ doped CaCu3Ti4O12 ceramics were successfully synthesized using a ball-milling oxide approach. Introducing Fe3+ doping resulted in a refined microstructure, significantly reducing the mean grain size of the CaCu3Ti4O12 ceramics. Dielectric property measurements were conducted at various temperatures. Increasing the Fe3+ content from 0 to 0.1 mol at room temperature led to a substantial decrease in dielectric permittivity, dropping from approximately 66246 to 435 at 10 kHz. This reduction in dielectric permittivity is closely associated with a substantial increase in grain resistance, which results in lower polarization density per volume and further contributes to the decline in dielectric permittivity. Additionally, low-frequency relaxation was observed at room temperature due to Fe3+ doping, likely attributed to grain boundary effects, specifically grain boundary relaxation. At elevated temperatures, the influence of grain boundaries in the doped ceramics becomes more pronounced than the extremely high grain resistance, leading to complete interfacial polarization and, thus, high dielectric permittivity within this temperature range. Furthermore, all Fe3+ doped CaCu3Ti4O12 ceramics exhibited nonlinear J-E characteristics, with the breakdown electric field enhanced from 31 to 41 V/cm due to Fe3+ doping. Although the doping of Fe3+ into the CaCu3Ti4O12 lattice does not enhance the energy storage properties due to the reduced permittivity at room temperature, the findings from this study provide crucial fundamental information. This knowledge will serve as a valuable foundation for researchers interested in developing CaCu3Ti4O12 ceramics, enabling further advancements in applications for electronic devices, energy storage, or other advanced technologies in the future.
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